Process and device simulation for MOS-VLSI circuits /

Bibliographic Details
Corporate Author: NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy
Other Authors: Antognetti, Paolo
Format: Conference Proceeding Book
Language:English
Published: Boston : Nijhoff ; 1983.
Series:NATO ASI series. Applied sciences ; no. 62.
Subjects:

Remote Storage

Holdings details from Remote Storage
Call Number: TK7874 .N343 1982
 
Call Number Status Get It
TK7874 .N343 1982 Available