GaAs high-speed devices : physics, technology, and circuit applications /

GaAs high-speed devices : physics, technology, and circuit applications /

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Bibliographic Details
Main Author: Chang, C. Y., 1937-
Other Authors: Kai, Francis, 1956-
Format: Book
Language:English
Published: New York : Wiley, [1994]
Subjects:
Gallium arsenide semiconductors.
Integrated circuits.
Table of Contents:
  • Development of gallium arsenide devices and integrated circuits
  • Gallium arsenide crystal structure and growth
  • Epitaxial growth processes
  • Process techniques
  • Lithography
  • Device-related physics and principles
  • Metal-to-GaAs contacts
  • GaAs metal
  • semiconductor field-effect transistor
  • High electron-mobility transistor (HEMT)
  • Heterojunction bipolar transistors
  • Resonant-tunneling transistors
  • Hot-electron transistors and novel devices
  • GaAs FET amplifiers and monolithic microwave integrated circuits
  • GaAs digital integrated circuits
  • High-speed photonic devices.