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00000cam a22000007a 4500 |
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in00001255564 |
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20151003092012.0 |
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950831s1986 dcu b f000 0 eng d |
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|a gp 95083783
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035 |
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|a (OCoLC)33070152
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035 |
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|9 AGV4245AM
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037 |
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|a N 86-20586
|b NASA
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040 |
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|a GPO
|c GPO
|d DLC
|d MvI
|d UtOrBLW
|
074 |
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|a 0830-H-15 (MF)
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086 |
0 |
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|a NAS 1.60:2532
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100 |
1 |
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|a Outlaw, R. A.
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245 |
1 |
0 |
|a Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition.
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246 |
2 |
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|a Growth of high quality thin film Ge single crystals by plasma-enhanced chemical vapor deposition
|
264 |
|
1 |
|a [Washington, DC] :
|b National Aeronautics and Space Administration, Scientific and Technical Information Branch ;
|c 1986.
|
264 |
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2 |
|a [Springfield, Va.] :
|b [For sale by the National Technical Information Service],
|
300 |
|
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|a 1 volume
|
336 |
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|a text
|b txt
|2 rdacontent
|
337 |
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|a microform
|b h
|2 rdamedia
|
338 |
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|a microfiche
|b he
|2 rdacarrier
|
490 |
1 |
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|a NASA technical paper ;
|v 2532
|
500 |
|
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|a Distributed to depository libraries in microfiche.
|
533 |
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|a Microfiche.
|b [Washington, D.C. :
|c National Aeronautics and Space Administration,
|d 1986]
|e 1 microfiche.
|
500 |
|
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|a Microform.
|
650 |
|
7 |
|a Germanium.
|2 nasat
|
650 |
|
7 |
|a Growth.
|2 nasat
|
650 |
|
7 |
|a PLASMAS (PHYSICS)
|2 nasat
|
650 |
|
7 |
|a Single crystals.
|2 nasat
|
650 |
|
7 |
|a Thin films.
|2 nasat
|
650 |
|
7 |
|a Vapor deposition.
|2 nasat
|
700 |
1 |
|
|a Hopson, P.
|
710 |
1 |
|
|a United States.
|b National Aeronautics and Space Administration.
|b Scientific and Technical Information Branch.
|
830 |
|
0 |
|a NASA technical paper ;
|v 2532.
|
999 |
|
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|a MARS
|
999 |
f |
f |
|s 03424623-d28b-38d9-bd97-5e7052a43553
|i d42f2df1-7d53-3768-9e52-f513534bba16
|t 0
|
952 |
f |
f |
|p normal
|a Texas A&M University
|b College Station
|c Sterling C. Evans Library
|d Evans: NTIS Microfiche (3rd floor)
|t 0
|e N86-20586
|h Other scheme
|i microform -- microfiche
|m A14820417949
|
998 |
f |
f |
|a N86-20586
|t 0
|l Evans: NTIS Microfiche (3rd floor)
|