Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition.

Bibliographic Details
Main Author: Outlaw, R. A.
Corporate Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Other Authors: Hopson, P.
Format: Government Document Book
Language:English
Published: [Washington, DC] : National Aeronautics and Space Administration, Scientific and Technical Information Branch ; 1986.
Series:NASA technical paper ; 2532.
Subjects:

MARC

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245 1 0 |a Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. 
246 2 |a Growth of high quality thin film Ge single crystals by plasma-enhanced chemical vapor deposition 
264 1 |a [Washington, DC] :  |b National Aeronautics and Space Administration, Scientific and Technical Information Branch ;  |c 1986. 
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650 7 |a Growth.  |2 nasat 
650 7 |a PLASMAS (PHYSICS)  |2 nasat 
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650 7 |a Thin films.  |2 nasat 
650 7 |a Vapor deposition.  |2 nasat 
700 1 |a Hopson, P. 
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