Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals /

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals /

Bibliographic Details
Main Author: Mishina, Hiroshi
Corporate Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Other Authors: Buckley, Donald H.
Format: Government Document Book
Language:English
Published: [Washington, D.C.?] : National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1984.
Series:NASA technical paper ; 2405.
Subjects:
Gallium compounds.
Silicon.

Evans: US Documents Microfiche (3rd floor)

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Call Number: NAS 1.60:2405
 
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NAS 1.60:2405 Available