Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition.

Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition.

Bibliographic Details
Main Author: Outlaw, R. A.
Corporate Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Other Authors: Hopson, P.
Format: Government Document Book
Language:English
Published: [Washington, DC] : National Aeronautics and Space Administration, Scientific and Technical Information Branch ; 1986.
Series:NASA technical paper ; 2532.
Subjects:
Germanium.
Growth.
PLASMAS (PHYSICS)
Single crystals.
Thin films.
Vapor deposition.

Evans: NTIS Microfiche (3rd floor)

Holdings details from Evans: NTIS Microfiche (3rd floor)
Call Number: N86-20586
 
Call Number Status Get It
N86-20586 Available