Outlaw, R. A., & Hopson, P. (1986). Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. National Aeronautics and Space Administration, Scientific and Technical Information Branch.
Chicago Style (17th ed.) CitationOutlaw, R. A., and P. Hopson. Growth of High-quality Thin-film Ge Single Crystals by Plasma-enhanced Chemical Vapor Deposition. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.
MLA (8th ed.) CitationOutlaw, R. A., and P. Hopson. Growth of High-quality Thin-film Ge Single Crystals by Plasma-enhanced Chemical Vapor Deposition. National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.
Warning: These citations may not always be 100% accurate.