Compensation in epitaxial cubic SiC films /

Bibliographic Details

Corporate Author:	Lewis Research Center
Other Authors:	Segall, Benjamin
Format:	Government Document Book
Language:	English
Published:	[Cleveland, Ohio] : [National Aeronautics and Space Administration, Lewis Research Center], [1986]
Series:	NASA technical memorandum ; 87269.
Subjects:	Silicon-carbide thin films. Epitaxy. Donor materials. Silicon carbides. Temperature dependence. Transient response. Vapor deposition.