Design of Shallow p-type Dopants in ZnO (Presentation) /

Design of Shallow p-type Dopants in ZnO (Presentation) /

Bibliographic Details
Main Author: Wei, Su-Huai
Corporate Authors: United States. Department of Energy, National Renewable Energy Laboratory (U.S.), United States. Department of Energy. Office of Scientific and Technical Information, IEEE Photovoltaic Specialists Conference
Other Authors: Yan, Y., Li, J.
Format: Government Document Conference Proceeding eBook
Language:English
Published: Washington, D.C. : United States. Dept. of Energy ; 2008.
Series:NREL/PR ; 520-43248.
Subjects:
Semiconductor doping.
Doped semiconductors.
Crystals > Defects.
Online Access:https://purl.fdlp.gov/GPO/gpo24405

Internet

https://purl.fdlp.gov/GPO/gpo24405

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Call Number: E 9.22:NREL/PR-520-43248
 
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E 9.22:NREL/PR-520-43248 Available