Design of shallow p-type dopants in ZnO : preprint /

Due to the large electronegativity of the oxygen, the ionization energies of acceptors in metal oxides such as ZnO is quite high, making p-type doping a great challenge for the full utilization of ZnO as optoelectronic materials. By analyzing the defect wavefunction characters, we propose several ap...

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Bibliographic Details

Main Author:	Wei, Su-Huai
Corporate Author:	National Renewable Energy Laboratory (U.S.)
Other Authors:	Li, Jian, Yan, Yixun
Format:	Government Document eBook
Language:	English
Published:	Golden, Colo. : National Renewable Energy Laboratory, [2008]
Series:	Conference paper (National Renewable Energy Laboratory (U.S.)) ; 590-42522.
Subjects:	Semiconductor doping. Doped semiconductors. Crystals > Defects.
Online Access:	http://purl.fdlp.gov/GPO/gpo23721 http://purl.fdlp.gov/GPO/gpo25721